A study of encapsulation resin containing hexagonal boron nitride (hBN) as inorganic filler

被引：52

作者：

Chiang, Tzu Hsuan ^{[1
]}

Hsieh, T. -E. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan

来源：

JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS | 2006年 / 16卷 / 02期

关键词：

encapsulation resin; hexagonal boron nitride (hBN); inorganic filler;

D O I：

10.1007/s10904-006-9037-8

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Preparation and property characterization of encapsulation resin contained hexagonal boron nitride (hBN) as inorganic filler were carried out in this work. The dielectric properties, coefficient of thermal expansion (CTE), thermal conductivity, curing kinetics, adhesion strength and viscosity of the resins with the load of hBN filler ranging from 9.2 to 25.7 vol.% (20-70 wt.%) were evaluated. It was found that the dielectric properties of resin containing SiO2 filler are inferior to that containing hBN. Also, the resins possessed lower CTE and the higher T-g when the hBN contents were high (> 15 vol.%) and the resin containing 25.7 vol.% hBN exhibited the largest thermal conductivity of 1.08 W/m K. Adhesion strength of the composite resins decreased with increase of hBN content and the adhesion strength on various substrates was found to be in the order of: alumina > Si wafer > eutectic PbSn solder.

引用

页码：175 / 183

页数：9

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