Infrared Circular Photogalvanic Effect in Topological Insulators

Topological insulators have attracted a lot of attention in recent years due its unique phenomena. Circular photogalvanic effect (CPGE) is one of the important phenomena in topological insulators. Bi2Se3, as one of the 3D topological insulators, consist of a single Dirac cone at the Gamma point in k-space [1], corresponding to the surface states. Controlled by the Berry curvature of the surface band, the dominant photo response due to the interband transition is helicity dependent [2]. In addition, due to the spin-momentum locking in topological insulators' surface, the sign of spin-angular momentum of obliquely incident light and photo currents are locked together. On the other hand, Bi2Se3 consists of quintuple layers which make it possible to he exfoliated and transferred based on graphene fabrication. In this paper, Bi2Se3 devices were fabricated and Ohm contact was achieved. We experimentally demonstrated the CPGE in Bi2Se3 using 1550nm incident laser.