Improved Cu2O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction

被引：105

作者：

Lee, Sang Woon ^{[1
]}

Lee, Yun Seog ^{[2
]}

Heo, Jaeyeong ^{[3
]}

Siah, Sin Cheng ^{[2
]}

Chua, Danny ^{[1
]}

Brandt, Riley E. ^{[2
]}

Kim, Sang Bok ^{[1
]}

Mailoa, Jonathan P. ^{[2
]}

Buonassisi, Tonio ^{[2
]}

Gordon, Roy G. ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

[2] MIT, Cambridge, MA 02139 USA

[3] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

来源：

ADVANCED ENERGY MATERIALS | 2014年 / 4卷 / 11期

基金：

美国国家科学基金会;

关键词：

COPPER; CU(IN; GA)SE-2; PHOTOVOLTAICS; SURFACE; FILMS; XPS; ALD;

D O I：

10.1002/aenm.201301916

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Solar cells are produced by atomic layer deposition (ALD) of n-type amorphous zinc-tin-oxide buffer layers on electrochemically deposited p-type cuprous oxide, Cu2O, absorber layers. The diethylzinc precursor in the ALD process reduces Cu2+-related defects at the heterojunction interface, improving the solar-cell open-circuit voltage. An NREL-certified power conversion efficiency of 2.85% is reported. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

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