Electronic structure of GaN studied with electron energy loss spectroscopy and density functional theory

被引：0

作者：

Keast, VJ

Scott, AJ

Kappers, MJ

Humphreys, CJ

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Univ Leeds, Dept Mat, Leeds LS2 9JT, W Yorkshire, England

来源：

ELECTRON MICROSCOPY AND ANALYSIS 2001 | 2001年 / 168期

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The Electron Energy Loss Near-Edge Structure (ELNES) is related to a site- and symmetry-projected, unoccupied density of states (DOS). Therefore, it contains information about the electronic structure and interatomic bonding of materials. In this work,GaN, an important light-emitting semiconductor, is studied. Experimental spectra are compared to theoretical spectra, based on a calculation of the DOS, and excellent agreement is observed when the effects of the core-hole are included. The anisotropy of the electronic structure is also investigated and a discussion of the nature of the bonding in GaN is given.

引用

页码：441 / 444

页数：4

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