Performance improvement of excimer laser annealed poly-Si TFTs using fluorine ion implantation

被引：21

作者：

Fan, CL ^{[1
]}

Chen, MC

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 08期

关键词：

D O I：

10.1149/1.1488017

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Significant improvement of device performance was observed for the excimer laser annealed (ELA) poly-Si thin film transistors (TFTs) by the incorporation of fluorine atoms using the ion implantation technique. This is presumably due to the relaxation of mechanical stress at the poly-Si/buffer-oxide interface and the passivation of trap-states in the poly-Si channel region and at the gate-oxide/poly-Si interface. We achieved high performance ELA poly-Si TFTs with a very low off-current of similar to0.26 pA/mum and a very high On/Off current ratio of about 10(8). Moreover, the fluorine ion implantation also greatly improved the reliability of the ELA poly-Si TFTs with respect to the hot-carrier stress, presumably due to the formation of strong Si-F bonds. (C) 2002 The Electrochemical Society.

引用

页码：G75 / G77

页数：3

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