Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers

被引:109
作者
Wang, Yao [1 ]
Xiao, Chengcheng [1 ]
Chen, Miaogen [1 ,2 ]
Hu, Chenqiang [1 ]
Zou, Junding [1 ]
Wu, Chen [1 ]
Jiang, Jianzhong [1 ]
Yang, Shengyuan A. [3 ]
Lu, Yunhao [1 ]
Ji, Wei [4 ]
机构
[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] China Jiliang Univ, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R China
[3] Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, Singapore
[4] Renmin Univ China, Dept Phys, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China
基金
中国国家自然科学基金;
关键词
TELLURIUM; POLARIZATION; ORIGIN; PLANE; PHASE;
D O I
10.1039/c8mh00082d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
New ferroelectric materials with satisfactory performance at the nanoscale are critical for the ever-developing microelectronics industry. Here, we report two-dimensional (2D) ferroelectricity in elemental tellurium multilayers, which exhibit spontaneous in-plane polarization due to the interlayer interaction between lone pairs. The magnitude of the polarization reaches about 1.02 x 10(-10) C m(-1) per layer, which can be detected by current experimental technology as recently done for the 2D FE compound SnTe. The spontaneous ferroelectric polarization can be preserved for the bilayer Te film even above room temperature. Also, we show that due to the strong spin-orbit coupling of Te, there appear nontrivial valley-dependent spin-textures for the hole carriers, and the textures are coupled with the direction of FE polarization, which is tunable by an external electric field. Our findings not only introduce the concept of ferroelectricity in elemental systems, but also broaden the family of the 2D ferroelectric materials and offer a promising platform for novel electronic and spintronic applications.
引用
收藏
页码:521 / 528
页数:8
相关论文
共 38 条
  • [1] REINVESTIGATION OF THE STRUCTURE OF TELLURIUM
    ADENIS, C
    LANGER, V
    LINDQVIST, O
    [J]. ACTA CRYSTALLOGRAPHICA SECTION C-CRYSTAL STRUCTURE COMMUNICATIONS, 1989, 45 : 941 - 942
  • [2] ON ORIGIN OF FERROELECTRICITY IN PEROVSKITE-TYPE CRYSTALS
    BERSUKER, IB
    [J]. PHYSICS LETTERS, 1966, 20 (06): : 589 - &
  • [3] PROJECTOR AUGMENTED-WAVE METHOD
    BLOCHL, PE
    [J]. PHYSICAL REVIEW B, 1994, 50 (24): : 17953 - 17979
  • [4] Brzina B., 1972, PHYS STATUS SOLIDI A, V11, P39
  • [5] Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
    Chang, Kai
    Liu, Junwei
    Lin, Haicheng
    Wang, Na
    Zhao, Kun
    Zhang, Anmin
    Jin, Feng
    Zhong, Yong
    Hu, Xiaopeng
    Duan, Wenhui
    Zhang, Qingming
    Fu, Liang
    Xue, Qi-Kun
    Chen, Xi
    Ji, Shuai-Hua
    [J]. SCIENCE, 2016, 353 (6296) : 274 - 278
  • [6] Ultrathin β-tellurium layers grown on highly oriented pyrolytic graphite by molecular-beam epitaxy
    Chen, Jinglei
    Dai, Yawei
    Ma, Yaqiang
    Dai, Xianqi
    Ho, Wingkin
    Xie, Maohai
    [J]. NANOSCALE, 2017, 9 (41) : 15945 - 15948
  • [7] ORIGIN OF FERROELECTRICITY IN PEROVSKITE OXIDES
    COHEN, RE
    [J]. NATURE, 1992, 358 (6382) : 136 - 138
  • [8] INVESTIGATION OF THE ELECTRONIC-PROPERTIES OF TELLURIUM-ENERGY-BAND STRUCTURE
    COKER, A
    LEE, T
    DAS, TP
    [J]. PHYSICAL REVIEW B, 1980, 22 (06): : 2968 - 2975
  • [9] Physics of thin-film ferroelectric oxides
    Dawber, M
    Rabe, KM
    Scott, JF
    [J]. REVIEWS OF MODERN PHYSICS, 2005, 77 (04) : 1083 - 1130
  • [10] Unusual lone pairs in tellurium and their relevance for superconductivity
    Deng, SQ
    Köhler, J
    Simon, A
    [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2006, 45 (04) : 599 - 602