Enhanced Performance of InAsP Nanowires with Ultra-thin Passivation Layer

被引：0
|
作者：
Adeyemo, Stephanie O. [1 ]
Kar, Srabani [1 ]
Zhang, Yunyan [2 ]
Liu, Huiyun [2 ]
Joyce, Hannah J. [1 ]
机构：
[1] Univ Cambridge, Dept Engn, Elect Engn Div, 9 JJ Thomson Ave, Cambridge CB3 0FA, England
[2] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
来源：
2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2019年
基金：
欧洲研究理事会; 英国工程与自然科学研究理事会;
关键词：
D O I：
10.1109/irmmw-thz.2019.8874492
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface passivation with a higher band gap shell has been shown to successfully reduce the density of surface states at the surface of nanowires. The effect of ultra-thin InP passivation layers of thicknesses 3-5 nm coated on InAsP nanowires is investigated and compared to bare lnAsP nanowires. The ultra thin passivation exhibited an improvement in carrier lifetime and mobility by approximately a factor of 3. Surface recombination velocity was decreased by at least a factor of 3.
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