Development of Reclaimed Pattern Sapphire Substrates Technologies for GaN-Based LEDs

被引：1

作者：

Huang, S. Y. ^{[1
]}

机构：

[1] Da Yeh Univ, Dept Ind Engn & Management, Changhua 51591, Taiwan

来源：

WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 14 | 2013年 / 53卷 / 02期

关键词：

H-2; DECOMPOSITION; STABILITY;

D O I：

10.1149/05302.0203ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The behavior of thermal decomposition of GaN epilayers was studied experimentally using different flow rates of hydrogen gas at elevated temperature. The GaN decomposition reactions rise with increasing annealing temperature and gas-flow rates. The GaN epilayers is complete dissociation and has a GaO2H reactant on surface of an exposed PSS. The GaN-based LEDs epilayers was grew on reclaiming substrates after GaO2H removed successfully. The optical and electrical performances of the regrown GaN-based LEDs on reclaimed-PSS agree with that of the original LEDs.

引用

页码：203 / 210

页数：8

共 15 条

[1]

Davydov AV, 2001, PHYS STATUS SOLIDI A, V188, P407, DOI 10.1002/1521-396X(200111)188:1<407::AID-PSSA407>3.0.CO

[2]

2-P

[3] Enhanced GaN decomposition in H2 near atmospheric pressures [J].

Koleske, DD ;

Wickenden, AE ;

Henry, RL ;

Twigg, ME ;

Culbertson, JC ;

Gorman, RJ .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :2018-2020

[4] GaN decomposition in H2 and N2 at MOVPE temperatures and pressures [J].

Koleske, DD ;

Wickenden, AE ;

Henry, RL ;

Culbertson, JC ;

Twigg, ME .

JOURNAL OF CRYSTAL GROWTH, 2001, 223 (04) :466-483

[5] High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology [J].

Lee, Seung-Jae ;

Kim, Kang Ho ;

Ju, Jin-Woo ;

Jeong, Tak ;

Lee, Cheul-Ro ;

Baek, Jong Hyeob .

APPLIED PHYSICS EXPRESS, 2011, 4 (06)

[6] High power nitride based light emitting diodes with Ni/ITO p-type contacts [J].

Lin, YC ;

Chang, SJ ;

Su, YK ;

Chang, CS ;

Shei, SC ;

Ke, JC ;

Lo, HM ;

Chen, SC ;

Kuo, CW .

SOLID-STATE ELECTRONICS, 2003, 47 (09) :1565-1568

[7] GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures [J].

Lin, Yu-Sheng ;

Yeh, J. Andrew .

APPLIED PHYSICS EXPRESS, 2011, 4 (09)

[8]

Mastro MA, 2001, PHYS STATUS SOLIDI A, V188, P467, DOI 10.1002/1521-396X(200111)188:1<467::AID-PSSA467>3.0.CO

[9]

2-1

[10] THERMODYNAMIC AND KINETIC PROCESSES INVOLVED IN THE GROWTH OF EPITAXIAL GAN THIN-FILMS [J].

NEWMAN, N ;

ROSS, J ;

RUBIN, M .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1242-1244

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