Lateral mode selection in a broad area laser diode by self-injection locking with a mirror stripe

被引：10
作者：
Thestrup, B [1 ]
Chi, MJ [1 ]
Petersen, PM [1 ]
机构：
[1] Riso Natl Lab, DK-4000 Roskilde, Denmark
来源：
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS II | 2004年 / 5336卷
关键词：
broad area laser; self-injection locking; semiconductor laser; external cavities; spatial modes;
D O I：
10.1117/12.529005
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, we demonstrate lateral mode selection and amplification in a broad area laser (BAL) diode in an external cavity. The cavity is based on self-injection locking of an 807 nm, 3W broad area diode using a mirror stripe as the feedback unit. At the optimum mirror stripe position, the lateral far-field intensity profile is narrowed 8.5 times compared with the profile from the freely running laser when running at a drive current of twice the threshold current. We have determined the lateral angular range, in which, different array modes can be exited and, only, within a narrow range around 2.3degrees from the beam centre a high, spatial beam coherence can be obtained.
引用
收藏
页码：38 / 44
页数：7
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