Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

被引：16
|
作者：
Ustinov, VM
Zhukov, AE
Kovsh, AR
Maleev, NA
Mikhrin, SS
Tsatsul'nikov, AF
Maximov, MV
Volovik, BV
Bedarev, DA
Kop'ev, PS
Alferov, ZI
Vorob'ev, LE
Firsov, DA
Suvorova, AA
Soshnikov, IP
Werner, P
Ledentsov, NN
Bimberg, D
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg Tech Univ, St Petersburg 194021, Russia
[3] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[4] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
MICROELECTRONICS JOURNAL | 2000年 / 31卷 / 01期
关键词：
quantum dot; molecular beam epitaxy; semiconductor laser;
D O I：
10.1016/S0026-2692(99)00083-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InCaAs/GaAs quantum well led to achieving the 1.3 mu m spontaneous emission and 1.26 mu m lasing with extremely low threshold current density of 70 A/cm(2) at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 mu m emission at room temperature. FIR emission simultaneous to 0.94 mu m lasing has been observed in InGaAs quantum dot lasers due to intersubband carrier transitions in quantum dots. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1 / 7
页数：7
相关论文
共 50 条
  • [41] Enhanced terahertz emission from InAs quantum dots on GaAs
    Park, Hongkyu
    Kim, Jeonghoi
    Jung, Euna
    Choi, Wonjun
    Lee, Jungil
    Han, Haewook
    OPTOELETRONIC MATERIALS AND DEVICES, PTS 1 AND 2, 2006, 6352
  • [42] Metamorphosis of self-organized quantum dots into quantum wires
    Liu, FQ
    Wang, ZG
    Xu, B
    Wu, J
    Qian, JJ
    PHYSICS LETTERS A, 1998, 249 (5-6) : 555 - 559
  • [43] Emission-wavelength extension of nitrided InAs/GaAs quantum dots with different sizes
    Mizuno, H.
    Inoue, T.
    Kikuno, M.
    Kita, T.
    Wada, O.
    Mori, H.
    Yasuda, H.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 709 - 712
  • [44] Long-wavelength multilayered InAs quantum dot lasers
    Shimizu, Hitoshi
    Saravanan, Shanmugam
    Yoshida, Junji
    Ibe, Sayoko
    Yokouchi, Noriyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (02): : 638 - 641
  • [45] New optical properties of Ge self-organized quantum dots
    Peng, CS
    Huang, Q
    Zhang, YH
    Cheng, WQ
    Sheng, TT
    Tung, CH
    Zhou, JM
    THIN SOLID FILMS, 1998, 323 (1-2) : 174 - 177
  • [46] The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
    Trevisi, G.
    Seravalli, L.
    Frigeri, P.
    Prezioso, M.
    Rimada, J. C.
    Gombia, E.
    Mosca, R.
    Nasi, L.
    Bocchi, C.
    Franchi, S.
    MICROELECTRONICS JOURNAL, 2009, 40 (03) : 465 - 468
  • [47] The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot
    Liu, Yumin
    Yu, Zhongyuan
    Huang, Yongzhen
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2006, 20 (29): : 4899 - 4907
  • [48] InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
    Lamas, TE
    Quivy, AA
    BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (2A) : 405 - 407
  • [49] Long wavelength and narrow photoluminescence linewidth from InAs quantum dots with GaAs cap layer on GaAs (100) substrate
    Saravanan, S
    Shimizu, H
    JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) : 14 - 17
  • [50] Engineering exciton dynamics in self-organized quantum dots
    Heitz, R
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 16 (01) : 68 - 75
12345