Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

被引：16

作者：

Ustinov, VM

Zhukov, AE

Kovsh, AR

Maleev, NA

Mikhrin, SS

Tsatsul'nikov, AF

Maximov, MV

Volovik, BV

Bedarev, DA

Kop'ev, PS

Alferov, ZI

Vorob'ev, LE

Firsov, DA

Suvorova, AA

Soshnikov, IP

Werner, P

Ledentsov, NN

Bimberg, D

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Tech Univ, St Petersburg 194021, Russia

[3] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

[4] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

MICROELECTRONICS JOURNAL | 2000年 / 31卷 / 01期

关键词：

quantum dot; molecular beam epitaxy; semiconductor laser;

D O I：

10.1016/S0026-2692(99)00083-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InCaAs/GaAs quantum well led to achieving the 1.3 mu m spontaneous emission and 1.26 mu m lasing with extremely low threshold current density of 70 A/cm(2) at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 mu m emission at room temperature. FIR emission simultaneous to 0.94 mu m lasing has been observed in InGaAs quantum dot lasers due to intersubband carrier transitions in quantum dots. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1 / 7

页数：7

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