Displacement current sensor for contact and intermittent contact scanning capacitance microscopy

被引:1
作者
Biberger, Roland [1 ]
Benstetter, Guenther [1 ]
Goebel, Holger [2 ]
机构
[1] Univ Appl Sci Deggendorf, D-94469 Deggendorf, Germany
[2] Helmut Schmidt Univ, D-22043 Hamburg, Germany
关键词
D O I
10.1016/j.microrel.2009.07.007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
in this study a displacement current capacitance sensor (DCCS) for scanning capacitance microscopy (SCM) is introduced. it can be used for both intermittent contact (IC) and contact-SCM operation. Based on I/Vconversion and subsequent lock-in amplification a displacement current can be detected and used as a measure for dopant concentration. Therefore a periodic variation of the AFM tip substrate capacitance is required. This can be achieved either by a periodic tip oscillation (IC-SCM) or an applied AC voltage between tip and sample (contact-SCM). The advantage of the DCCS is the linearity, which makes it possible to detect absolute dopant concentrations. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1192 / 1195
页数:4
相关论文
共 7 条
[1]  
BHUSAN B, 2004, HDB NANOTECHNOLOGY
[2]   Intermittent contact scanning capacitance microscopy - An improved method for 2D doping profiling [J].
Breitschopf, P ;
Benstetter, G ;
Knoll, B ;
Frammelsberger, W .
MICROELECTRONICS RELIABILITY, 2005, 45 (9-11) :1568-1571
[3]  
*DIG INSTR, 1999, 224 DIT INSTR
[4]   Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors [J].
Kopanski, JJ ;
Marchiando, JF ;
Lowney, JR .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :46-51
[5]  
MEADE ML, 1983, LOCK IN AMPLIFIERS
[6]   Two-dimensional dopant profiling by scanning capacitance microscopy [J].
Williams, CC .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1999, 29 :471-504
[7]  
Wong CSC, 2002, THESIS