Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 μm

被引：34
作者：
Cade, N. I.
Gotoh, H.
Kamada, H.
Nakano, H.
Anantathanasarn, S.
Notzel, R.
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Eindhoven Univ Technol, Inter Univ Res Inst, eiTT COBRA, NL-5600 MB Eindhoven, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期
关键词：
D O I：
10.1063/1.2378403
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with a characteristic exciton-biexciton behavior and a biexciton antibinding energy of more than 2 meV relative to the exciton. Temperature-dependent measurements reveal negligible optical phonon induced broadening of the exciton line below 50 K, and emission from the exciton state clearly persists above 70 K. These results are encouraging for the development of a controllable photon source for fiber-based quantum information and cryptography systems. (c) 2006 American Institute of Physics.
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页数：3
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