Fabrication of GaInNAs-based solar cells for application to multi-junction tandem solar cells

被引：0

作者：

Miyashita, Naoya ^{[1
]}

Shimizu, Yukiko ^{[1
]}

Kobayashi, Naoto ^{[1
]}

Okada, Yoshitaka ^{[1
]}

Yamaguchi, Masafumi ^{[2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2 | 2006年

关键词：

multi-junction solar cells; dilute nitride semiconductors; RF-MBE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have investigated the characteristics of p-GaAs/i-n-Ga0.97In0.03N0.01As0.99 heterojunction solar cells with different intrinsic layer thickness. The solar cells studied in this study were fabricated by atomic hydrogen-assisted RF-MBE on GaAs(001) substrates. With an optimized Player thickness of 600nm, maximum quantum efficiency of > 80% has been obtained, and the hole diffusion length in n-Ga0.97In0.03N0.01As0.99 film was similar to 160nm. Then we fabricated our first homojunction GaInNAs solar cells, and short-circuit current density of 14.2 mA/cm(2) has been achieved.

引用

页码：869 / 872

页数：4

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