Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells

被引：4

作者：

Huang, Cheng-Ying ^{[1
]}

Law, Jeremy J. M. ^{[1
]}

Lu, Hong ^{[1
,2
]}

Jena, Debdeep ^{[3
]}

Rodwell, Mark J. W. ^{[1
]}

Gossard, Arthur C. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 12期

基金：

美国国家科学基金会;

关键词：

INTERFACE ROUGHNESS SCATTERING; MOBILITY; IMPROVEMENT; GAS;

D O I：

10.1063/1.4869498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the growth and electron transport in In0.53Ga0.47As/AlAs0.56Sb0.44 two dimensional electron gases (2DEG) and compared their properties with In0.53Ga0.47As/In0.52Al0.48As 2DEGs. For 10 nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3 nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63 x 10(3) cm(2)/V.s to 2.71 x 10(3) cm(2)/V.s for a 3nm InGaAs well. (C) 2014 AIP Publishing LLC.

引用

页数：7

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