An epitaxial Si/SiO2 superlattice barrier

被引：14
作者：
Tsu, R
Filios, A
Lofgren, C
Cahill, D
Vannostrand, J
Wang, CG
机构：
[1] UNIV ILLINOIS, URBANA, IL 61801 USA
[2] NANODYNAM, NEW YORK, NY USA
来源：
SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0038-1101(95)00253-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An epitaxial strain layer Si/SiO2 superlattice barrier (SLSB) for silicon formed by monolayers of adsorbed oxygen, sandwiched between adjacent thin silicon layers deposited with molecular beam, showed good epitaxy with an effective barrier height of 1.7 eV. Such a barrier should be important for future quantum devices in silicon, as well as new applications in conventional MOS technology.
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页码：221 / 223
页数：3
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