Dislocation emission at the silicon/silicon nitride interface:: A million atom molecular dynamics simulation on parallel computers

被引：28
作者：
Bachlechner, ME [1 ]
Omeltchenko, A
Nakano, A
Kalia, RK
Vashishta, P
Ebbsjö, I
Madhukar, A
机构：
[1] Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA
[2] Louisiana State Univ, Dept Comp Sci, Baton Rouge, LA 70803 USA
[3] Uppsala Univ, Studsvik Neutron Res Lab, S-61182 Nykoping, Sweden
[4] Univ So Calif, Dept Mat Sci & Engn, Los Angeles, CA 90089 USA
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.84.322
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Mechanical behavior of the Si(111)/Si3N4(0001) interface is studied using million atom molecular dynamics simulations, At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the ((1) over bar (1) over bar 1) plane of the silicon substrate with a speed of 500 (+/-100) m/s. Time evolution of the dislocation emission and nature of defects is studied.
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收藏
页码：322 / 325
页数：4
相关论文
共 28 条
[1]   Spanning the length scales in dynamic simulation [J].
Abraham, FF ;
Broughton, JQ ;
Bernstein, N ;
Kaxiras, E .
COMPUTERS IN PHYSICS, 1998, 12 (06) :538-546
[2]   Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels [J].
Bachlechner, ME ;
Omeltchenko, A ;
Nakano, A ;
Kalia, RK ;
Vashishta, P ;
Ebbsjo, I ;
Madhukar, A ;
Messina, P .
APPLIED PHYSICS LETTERS, 1998, 72 (16) :1969-1971
[3]   Connecting atomistic and mesoscale simulations of crystal plasticity [J].
Bulatov, V ;
Abraham, FF ;
Kubin, L ;
Devincre, B ;
Yip, S .
NATURE, 1998, 391 (6668) :669-672
[4]   COMPARISON OF SEMIEMPIRICAL POTENTIAL FUNCTIONS FOR SILICON AND GERMANIUM [J].
COOK, SJ ;
CLANCY, P .
PHYSICAL REVIEW B, 1993, 47 (13) :7686-7699
[5]   Pinning and depinning of crack fronts in heterogeneous materials [J].
Daguier, P ;
Nghiem, B ;
Bouchaud, E ;
Creuzet, F .
PHYSICAL REVIEW LETTERS, 1997, 78 (06) :1062-1065
[6]   Growing spatial correlations of particle displacements in a simulated liquid on cooling toward the glass transition [J].
Donati, C ;
Glotzer, SC ;
Poole, PH .
PHYSICAL REVIEW LETTERS, 1999, 82 (25) :5064-5067
[7]   THE THERMOMECHANICAL INTEGRITY OF THIN-FILMS AND MULTILAYERS [J].
EVANS, AG ;
HUTCHINSON, JW .
ACTA METALLURGICA ET MATERIALIA, 1995, 43 (07) :2507-2530
[8]  
Ferry DK, 1997, TRANSPORT NANOSTRUCT
[9]   MIXED-MODE CRACKING IN LAYERED MATERIALS [J].
HUTCHINSON, JW ;
SUO, Z .
ADVANCES IN APPLIED MECHANICS, VOL 29, 1992, 29 :63-191
[10]   Ledge effects on dislocation emission from a crack tip: A first-principles study for silicon [J].
Juan, YM ;
Sun, YM ;
Kaxiras, E .
PHILOSOPHICAL MAGAZINE LETTERS, 1996, 73 (05) :233-240
123