Diffusion and clustering of substitutional Mn in (Ga,Mn)As

被引：24

作者：

Raebiger, Hannes ^{[1
]}

Ganchenkova, Maria ^{[1
]}

von Boehm, Juhani ^{[1
]}

机构：

[1] Helsinki Univ Technol, COMP, Phys Lab, Espoo 02015, Finland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期

基金：

芬兰科学院;

关键词：

D O I：

10.1063/1.2219337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Ga vacancy mediated microstructure evolution of (Ga,Mn)As during growth and postgrowth annealing is studied using a multiscale approach. The migration barriers for the Ga vacancies and substitutional Mn together with their interactions are calculated using first principles, and temporal evolution at temperatures 200-350 degrees C is studied using lattice kinetic Monte Carlo simulations. We show that at the typical growth and annealing temperatures (i) Ga vacancies provide an efficient diffusion transport for Mn and (ii) in 10-20 h the diffusion of Mn promotes the formation of clusters. Clustering reduces the Curie temperature, and explains its decrease during long-term annealing. (c) 2006 American Institute of Physics.

引用

页数：3

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