A capacitive silicon resonator with a movable electrode structure for gap width reduction

被引:38
作者
Nguyen Van Toan [1 ,2 ]
Toda, Masaya [1 ,2 ]
Kawai, Yusuke [1 ]
Ono, Takahito [1 ]
机构
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Microsyst Integrat Ctr SIC, Sendai, Miyagi 9808579, Japan
关键词
capacitive silicon resonator; movable electrode; low temperature co-fired ceramic; finite element method; ACOUSTIC-WAVE RESONATORS; LOW-IMPEDANCE VHF; MEMS;
D O I
10.1088/0960-1317/24/2/025006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a capacitive silicon resonator with movable electrode structures to reduce the motional resistance for lower insertion loss and lower phase noise, and also increase the tuning frequency range for the compensation of temperature drift of the silicon oscillator. The resonant frequency of the fabricated device with a length of 500 mu m, width of 440 mu m and thickness of 5 mu m is observed at 9.65 MHz, and the quality factor is 49 000. Using an electrostatically drived movable electrode structure, it is shown that the motional resistance is reduced by 200 times, the output signal (insertion loss) is increased by 21 dB and the tuning characteristic of the frequency is also increased by seven times over that of the structures without movable electrodes.
引用
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页数:11
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