Two-step growth of VSe2 films and their photoelectric properties

被引：9

作者：

Zeng, Yu ^{[1
]}

Zhang, Shengli ^{[1
]}

Li, Xiuling ^{[1
]}

Ao, Jianping ^{[1
]}

Sun, Yun ^{[1
]}

Liu, Wei ^{[1
]}

Liu, Fangfang ^{[1
]}

Gao, Peng ^{[2
]}

Zhang, Yi ^{[1
]}

机构：

[1] Inst Photoelect Thin Film Devices & Technol, Tianjin Key Lab Photoelect Thin Film Devices & Te, Tianjin 300071, Peoples R China

[2] Tianjin Inst Power Source, Tianjin 300384, Peoples R China

来源：

CHINESE PHYSICS B | 2019年 / 28卷 / 05期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

two-step route; VSe2; selenization; thin film; VANADIUM DISELENIDE; NANOSHEETS;

D O I：

10.1088/1674-1056/28/5/058101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We put forward a two-step route to synthesize vanadium diselenide (VSe2), a typical transition metal dichalcogenide (TMD). To obtain the VSe2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400 degrees C selenization temperature, we successfully prepare VSe2 films on both glass and Mo substrates. The prepared VSe2 has the characteristic of preferential growth along the c-axis, with low transmittance. It is found that the contact between Al and VSe2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe2/Mo sample reveal that the VSe2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe2 in photovoltaic devices.

引用

页数：7

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