Direct preparation of crystalline CuInS2 thin films by radiofrequency sputtering

被引：19

作者：

Cayzac, R. ^{[1
,2
,3
]}

Boulc'h, F. ^{[1
,2
,3
]}

Bendahan, M. ^{[4
,5
,6
]}

Lauque, P. ^{[4
,5
,6
]}

Knauth, P. ^{[1
,2
,3
]}

机构：

[1] Univ Aix Marseille 1, CNRS,UMR 6264, Lab Chim Provence, Ctr St Jerome, Marseille, France

[2] Univ Aix Marseille 2, CNRS,UMR 6264, Lab Chim Provence, Ctr St Jerome, Marseille, France

[3] Univ Aix Marseille 3, CNRS,UMR 6264, Lab Chim Provence, Ctr St Jerome, Marseille, France

[4] Univ Aix Marseille 1, CNRS,UMR 6264, Inst Mat Microelect Nanosci Provence, Ctr St Jerome, Marseille, France

[5] Univ Aix Marseille 2, CNRS,UMR 6264, Inst Mat Microelect Nanosci Provence, Ctr St Jerome, Marseille, France

[6] Univ Aix Marseille 3, CNRS,UMR 6264, Inst Mat Microelect Nanosci Provence, Ctr St Jerome, Marseille, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 157卷 / 1-3期

关键词：

Chalcogenides; Thin films; Sputtering; Grazing incidence X-ray diffraction; Atomic force microscopy; SOLAR-CELLS; GROWTH; RAMAN;

D O I：

10.1016/j.mseb.2008.12.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystalline chalcopyrite CuInS2 thin films were obtained by r.f. sputtering at room temperature using a crystalline CuInS2 target and without any subsequent toxic gas. chemical or heat treatment. A systematic study of phase formation by X-ray diffraction and Raman spectroscopy and of morphology by scanning electron microscopy and atomic force microscopy was performed as function of relevant sputtering parameters: argon pressure, r.f. power and time of deposition. XRD studies show that films are amorphous until a critical thickness is reached, where they transform into crystalline chalcopyrite films with preferential (112) orientation and averagegrain size of 25-100nm.At low deposition rates, smooth films were obtained, whereas at high deposition rates, films are covered with surface particles. Films were p-type conducting with bulk carrier density about 10(18)/cm(3). determined by Hall effect measurements. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：66 / 71

页数：6

共 24 条

[1] Growth process monitoring and crystalline quality assessment of CuInS(Se)2 based solar cells by Raman spectroscopy [J].