Process Study of Atomic layer deposition Al2O3 in Industry Application for solar cells

被引：1

作者：

Qiu, Hong-bo ^{[1
,2
]}

Li, Hui-qi ^{[1
]}

Liu, Bang-wu ^{[2
]}

Xia, Yang ^{[2
]}

机构：

[1] Shandong Univ Sci & Technol, Sch Mat Sci & Engn, Qingdao 266590, Peoples R China

[2] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

来源：

EIGHTH CHINA NATIONAL CONFERENCE ON FUNCTIONAL MATERIALS AND APPLICATIONS | 2014年 / 873卷

关键词：

Atomic Layer Deposition; Al2O3; Multi-silicon; Minority carrier lifetime; Laser Opening-line contact; SURFACE RECOMBINATION; SILICON; PASSIVATION; SI;

D O I：

10.4028/www.scientific.net/AMR.873.540

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The rear surface of multi-silicon has been passivated by Atomic Layer Deposition(ALD) Al2O3 and Plasma Enhanced Chemical Vapor Deposition(PECVD) SiNx. The results of the effective lifetime of the silicon before and after firing show that the thickness of Al2O3 thin films has a significant effect on the passivation quality The effective lifetime of the silicon can reach up to 40.64 mu s and show a better passvation quality when the thickness of Al2O3 film is 18nm. Moreover, the impact of spacing of the laser opening-line contact on open-circuit voltage and fill-factor has been furthermore investigated. The cells have a better performance when the spacing of the opening-line is 1.2mm. The result of the local topography of the opening-line contact tested by Scanning Electron Microscopy(SEM) shows that the existing of the void in the interface between Al and Si is the main reason for the bad performance of the cells.

引用

页码：540 / +

页数：2

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