Light induced phase change in Cu2-xZn1.3SnS4 thin films

被引：8
作者：
Samji, Sunil Kumar
Tiwari, Brajesh
Surendra, M. Krishna
Rao, M. S. Ramachandra [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 15期
关键词：
SOLAR-CELLS; CHALCOPYRITE SEMICONDUCTORS; CU2ZNSNS4; NANOCRYSTALS; CZTS; SE; CU;
D O I：
10.1063/1.4871705
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cu2ZnSnS4 and its alloy based thin film solar cells have shown better photovoltaic performance under Cu-poor and Zn-rich conditions. However, the effect of Cu-stoichiometry on the coexistence of kesterite (KS), stannite and/or partially disordered kesterite (PD-KS) phases and their influence on photovoltaic performance is not clearly understood. Raman studies were carried out on Cu2-xZn1.3SnS4 (x = 0, 0.3, and 0.5) thin films by changing the intensity of the incident laser beam. It was observed that both Cu-stoichiometry and incident laser beam intensity induce a disorder in the system. Disorder induced transformation of KS (I (4) over bar) to PD-KS (I (4) over bar 2m) is explained by Raman studies. (C) 2014 AIP Publishing LLC.
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页数：5
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