Development and implementation of a readout module for radiation-sensing field-effect transistors

被引：1

作者：

Ruckman, L. ^{[1
]}

Varner, G.

Stanie, S.

Koga, A.

Tsuboyama, T.

机构：

[1] Univ Hawaii, Dept Phys & Astron, Honolulu, HI 96822 USA

[2] Univ Nova Gorica, Nova Gorica 5000, Slovenia

[3] High Energy Accelerator Res Org, KEK, Tsukuba, Ibaraki 305080, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 04期

关键词：

B factory; MOSFET; radiation monitoring;

D O I：

10.1109/TNS.2006.878272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a readout module for radiation-sensing. field-effect transistors. Three of these modules are currently being used for measuring the total accumulated dose in the silicon vertex detector (SVD) of the Belle experiment at KEKB B-meson factory in the High energy accelerator research organization (KEK), Japan. These modules have been in operation since August 2005.

引用

页码：2452 / 2455

页数：4

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