GaN Power Devices: Challenges for Improved Stability and Reliability

被引：0
|
作者：
Meneghini, Matteo [1 ]
机构：
[1] Univ Padua, Dipartimento Ingn Informaz, Via Gradenigo 6-A, I-35131 Padua, Italy
来源：
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2022年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
TuT8
引用
收藏
页数：1
相关论文
共 50 条
  • [1] Stability, Reliability, and Robustness of GaN Power Devices: A Review
    Kozak, Joseph Peter
    Zhang, Ruizhe
    Porter, Matthew
    Song, Qihao
    Liu, Jingcun
    Wang, Bixuan
    Wang, Rudy
    Saito, Wataru
    Zhang, Yuhao
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (07) : 8442 - 8471
  • [2] Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
    Islam, Naeemul
    Mohamed, Mohamed Fauzi Packeer
    Khan, Muhammad Firdaus Akbar Jalaludin
    Falina, Shaili
    Kawarada, Hiroshi
    Syamsul, Mohd
    CRYSTALS, 2022, 12 (11)
  • [3] Reliability issues in GaN and SiC power devices
    Ueda, Tetsuzo
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [4] Establishing the reliability lifecycle of GaN power devices
    2017, Hearst Business Communications (59):
  • [5] Application reliability validation of GaN power devices
    Bahl, Sandeep R.
    Joh, Jungwoo
    Fu, Lixing
    Sasikumar, Anup
    Chatterjee, Tathagata
    Pendharkar, Sameer
    2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [6] From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)
    Zagni, Nicolo
    8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 256 - 258
  • [7] Power cycling reliability results of GaN HEMT devices
    Franke, Joerg
    Zeng, Guang
    Winkler, Tom
    Lutz, Josef
    PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 467 - 470
  • [8] GaN power devices: current status and future challenges
    Ueda, Tetsuzo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58
  • [9] An improved reliability model for Si and GaN power FET
    Golan, Gady
    Azoulay, Moshe
    Avraham, Tsuriel
    Kremenetsky, Ilan
    Bernstein, Joseph B.
    MICROELECTRONICS RELIABILITY, 2018, 81 : 77 - 89
  • [10] Reliability issues of GaN based high voltage power devices
    Wuerfl, J.
    Bahat-Treidel, E.
    Brunner, F.
    Cho, E.
    Hilt, O.
    Ivo, P.
    Knauer, A.
    Kurpas, P.
    Lossy, R.
    Schulz, M.
    Singwald, S.
    Weyers, M.
    Zhytnytska, R.
    MICROELECTRONICS RELIABILITY, 2011, 51 (9-11) : 1710 - 1716
12345