Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers

被引：44

作者：

Shin, J. C. ^{[1
]}

D'Souza, M. ^{[1
]}

Liu, Z. ^{[1
]}

Kirch, J. ^{[1
]}

Mawst, L. J. ^{[1
]}

Botez, D. ^{[1
]}

Vurgaftman, I. ^{[2
]}

Meyer, J. R. ^{[2
]}

机构：

[1] Univ Wisconsin, Dept ECE, Madison, WI 53706 USA

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

关键词：

current density; quantum cascade lasers; semiconductor lasers; semiconductor quantum wells; CONTINUOUS-WAVE OPERATION;

D O I：

10.1063/1.3139069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

4.8 mu m emitting, quantum cascade (QC) lasers that suppress carrier leakage out of their active regions to the continuum have been realized by using deep (in energy) quantum wells in the active regions, tall barriers in and around the active regions, and tapered conduction-band-edge relaxation regions. The characteristic temperature coefficients T-0 and T-1 for the threshold current density J(th) and slope efficiency, respectively, reach values of 238 K over the 20-60 degrees C temperature range, which means that J(th) and the slope efficiency vary with temperature half as fast as those of conventional QC lasers. In turn, significantly improved continuous wave performance is expected.

引用

页数：3

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