Optical properties of novel GaN 3D structures grown by metal-organic chemical vapor deposition (MOCVD)

被引:6
作者
Sacilotti, M
Imhoff, L
Dumas, C
Viste, P
Vial, JC
Baldeck, P
Colombier, I
Donatini, F
机构
[1] Univ Bourgogne, FR CNRS 2604, Couches Minces & Nanostruct Grp, F-21078 Dijon, France
[2] Univ Bourgogne, LRRS, Surface & Interface Grp, Dijon, France
[3] Univ Grenoble 1, Spectrometrie Phys Lab, Grenoble, France
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 6A期
关键词
MOVPE; MOCVD; metal-organic; microstructure; Ga metallic structures; GaN;
D O I
10.1143/JJAP.43.L698
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical properties of novel micrometer-size Ga and GaN three-dimensional structures obtained by the metal-organic chemical vapour deposition (MOCVD) technique are presented in this letter. These structures are obtained as metallic three dimensions (3D) micrometer-size objects on an appropriate substrate by metalorganic (TMGa) pyrolisis and then GaN transformed on annealing under NH3 atmosphere at 650-750degreesC. These 3D GaN structures are analysed by optical means, using two-photon excitation (800 nm) and by UV Hg lamp fluorescent spectroscopy techniques, adapted to two-optical-microscopes apparatus. Very intense and blue/yellow light emission is observed from these 3D structures under 800 nm two-photon laser excitation and under UV Hg lamp excitation.
引用
收藏
页码:L698 / L701
页数:4
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