Atom Probe Tomography for Nanoscale Characterization of CdTe Device Absorber Layers and Interfaces

被引：0

作者：

Diercks, David R. ^{[1
]}

Li, Jiaojiao ^{[1
]}

Beach, Joseph D. ^{[1
]}

Wolden, Colin A. ^{[1
]}

Gorman, Brian P. ^{[1
]}

机构：

[1] Colorado Sch Mines, Golden, CO 80401 USA

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

CdTe; ZnTe; photovoltaic; thin film; atom probe tomography; mass spectrometry;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cadmium telluride (CdTe) solar cells are a leading thin film technology with relatively high efficiencies. However, even the highest published efficiency CdTe cell is well below the theoretical achievable efficiency. Atomic scale characterization would provide important feedback on optimization of CdTe cells for further efficiency improvements. Atom probe tomography (APT), with both high spatial resolution and ppm composition sensitivity, is a technique well-suited for providing these details. It is demonstrated here that the compositions measured for CdTe and ZnTe by APT are sensitive to the analysis conditions, in particular the incident laser energy. Experiments demonstrating the relationships of the analysis parameters are presented. Using optimized values, APT analyses of the absorber layer and interfaces in CdTe devices were performed.

引用

页码：85 / 89

页数：5

共 15 条

[1] Characterizing Atomic Composition and Dopant Distribution in Wide Band Gap Semiconductor Nanowires Using Laser-Assisted Atom Probe Tomography [J].