Analysis of intra-grain defects in multicrystalline silicon wafers by photoluminescence mapping and spectroscopy

被引：40

作者：

Sugimoto, Hiroki

Inoue, Masaaki

Tajima, Michio

Ogura, Atsushi

Ohshita, Yoshio

机构：

[1] Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

[2] Meiji Univ, Tama Ku, Kawasaki, Kanagawa 2148571, Japan

[3] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 24-28期

基金：

美国国家卫生研究院;

关键词：

photoluminescence; PL; mapping; multicrystalline Si; intra-grain; defects; dislocations; D-lines;

D O I：

10.1143/JJAP.45.L641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly spatial resolved photolummescence (PL) characterization of intra-grain defects in recent multicrystalline Si wafers for solar cells was performed. Comparison of band-edge PL intensity mapping with minority carrier lifetime mapping on a whole wafer showed that low PL intensity regions correspond to short lifetime regions. PL microscopic mapping revealed that micron-sized defects are present in the e regions. We also confirmed that grain boundaries are not active recombination centers. Low-temperature PL spectra were investigated, and dislocation-related lines, D1-D4, were observed only in the defect areas. We consider that these-defects are ascribable to dislocations decorated with heavy metals and responsible for great degradation of lifetime.

引用

页码：L641 / L643

页数：3

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