Efficient improvement of hot carrier-induced degradation for 0.1-μm indium-halo nMOSFET

被引：0

作者：

Yeh, WK ^{[1
]}

Lin, JC

机构：

[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 04期

关键词：

hot carrier-induced device degradation; indium halo (In-halo); post-thermal annealing (PA);

D O I：

10.1109/TED.2004.823797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of post-thermal annealing after indium-halo implantation on the reliability of sub-0.1-mum nMOSFETs was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving the hot carrier-induced device degradation. The best results of device performance were obtained with post-annealing treatment performed at medium temperatures (e.g., 900 degreesC) for a longer time.

引用

页码：642 / 644

页数：3

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