Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

被引：46

作者：

Weyher, J. L. ^{[1
]}

Ashraf, H. ^{[2
]}

Hageman, P. R. ^{[2
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] Radboud Univ Nijmegen, IMM Appl Mat Sci, NL-6526 ED Nijmegen, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

关键词：

dislocation density; etching; gallium compounds; III-V semiconductors; MOCVD; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; VAPOR-PHASE EPITAXY; LASER-DIODES; GROWN GAN; HVPE;

D O I：

10.1063/1.3171928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN templates grown by the metal organic chemical vapor deposition method were etched in a defect-selective molten salts eutectic and were subsequently overgrown by a GaN layer using the hydride vapor phase epitaxy (HVPE) method. Optimized conditions of etching and of HVPE growth processes resulted in a significant reduction of the dislocations density (DD). Local areas virtually free of dislocations were obtained on similar to 50% of the surface, while the average DD was reduced from 3x10(9) cm(-2) in the template to about 2x10(7) cm(-2) in the HVPE-grown GaN layer. A model has been developed to explain the mechanism of reduction of the DD during the overgrowth process. The model was confirmed by the photoetching of cleaved layers.

引用

页数：3

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