Preparation and ferroelectric properties of lead zirconate titanate thin films by RF magnetron sputtering

PZT(45/55) ferroelectric thin films were deposited on platinum-coated silicon wafers with no substrate heating using RF magnetron sputtering. The effects of target and annealing process on the compositions, structures and electrical properties of the sputtered thin films were studied. A single perovskite phase structure was obtained with post-annealing at 500 degrees C for 60 min in O-2. This crystallization temperature is the lowest value reported. Also, the PbO in the thin films is not made volatile during the annealing process, even at temperature as high as 700 degrees C. This is in contrast to what has been reported, and the properties of the thin films are improved. The thin films have a maximum remnant polarization (Pr) of 13.8 mu C cm(-2) and a minimum coercive field (Ec) of 55.5 kV cm(-1) when annealed at 650 degrees C for 60 min.