Band-gap engineering of metal oxides for dye-sensitized solar cells

被引：81

作者：

Duerr, M. ^{[1
]}

Rosselli, S. ^{[1
]}

Yasuda, A. ^{[1
]}

Nelles, G. ^{[1
]}

机构：

[1] Sony Deutschland GmbH, Mat Sci Lab, D-70327 Stuttgart, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2006年 / 110卷 / 43期

关键词：

D O I：

10.1021/jp063857c

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Mixed oxides Ti1-xZrxO2 with 0 < x <= 0.2 were synthesized by means of thermal hydrolysis for use in dye-sensitized solar cells. The lattice parameter d is observed to increase linearly with Zr content x. The band gap of the mixed oxides was measured to increase by up to 0.2 eV. The respective shift of the conduction band edge leads to an increase of the open circuit voltage (V-OC) by up to 0.1 V. Among others, temperature-dependent measurements of V-OC clearly identify the correlation between band edge shift and change in V-OC.

引用

页码：21899 / 21902

页数：4

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