S vacancy enhanced ferromagnetism in Mn-doped monolayer MoS2: A hybrid functional study

被引:9
作者
Han, Xiaoping [1 ,2 ]
Benkraouda, Maamar [1 ,2 ]
Amrane, Noureddine [1 ,2 ]
机构
[1] United Arab Emirates Univ, Dept Phys, POB 15551, Al Ain, U Arab Emirates
[2] United Arab Emirates Univ, Emirates Ctr Energy & Environm Res, POB 15551, Al Ain, U Arab Emirates
关键词
Monolayer MoS2; Hybrid functional; Mn doping; S vacancy; Electronic properties; Magnetic properties; SINGLE-LAYER MOS2; ROOM-TEMPERATURE FERROMAGNETISM; INITIO MOLECULAR-DYNAMICS; MAGNETIC-PROPERTIES; STRUCTURAL DEFECTS; OXYGEN VACANCY; TRANSITION; STABILITY; TRANSPORT; INTERPLAY;
D O I
10.1016/j.chemphys.2020.111043
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electronic and magnetic properties of monolayer MoS2 with a Mn dopant and a native S vacancy (VS) has been systematically investigated using hybrid functional method, so as to predict and interpret the influence of VS on the magnetic properties of Mn-doped monolayer MoS2. Results show that the incorporation of VS in Mn-doped monolayer MoS2 causes excess electrons to localize at the VS site and the surrounding Mn and Mo atoms. This leads to the additional ferromagnetic contribution from the polarization of these localized electrons, effectively enhancing the ferromagnetism in Mn-doped monolayer MoS2. The importance of the clustering of VS and Mn substitution on the enhancement of ferromagnetism, and the stability of the Mn-VS cluster in monolayer MoS2 as well, have been discussed in detail. The present work is beneficial for deeply understanding the ferromagnetism in Mn-doped monolayer MoS2 and for
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页数:6
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共 65 条
[1]   Tunable magnetic properties of transition metal doped MoS2 [J].
Andriotis, Antonis N. ;
Menon, Madhu .
PHYSICAL REVIEW B, 2014, 90 (12)
[2]   Functionalization of Single-Layer MoS2 Honeycomb Structures [J].
Ataca, C. ;
Ciraci, S. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (27) :13303-13311
[3]   Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2 [J].
Baugher, Britton W. H. ;
Churchill, Hugh O. H. ;
Yang, Yafang ;
Jarillo-Herrero, Pablo .
NANO LETTERS, 2013, 13 (09) :4212-4216
[4]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[5]  
BRONSEMA KD, 1986, Z ANORG ALLG CHEM, V541, P15
[6]   Structural and electronic properties of oxygen vacancies in cubic and antiferrodistortive phases of SrTiO3 -: art. no. 180102 [J].
Buban, JP ;
Iddir, H ;
Ogüt, S .
PHYSICAL REVIEW B, 2004, 69 (18) :180102-1
[7]   Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping [J].
Chen, Mikai ;
Nam, Hongsuk ;
Wi, Sungjin ;
Ji, Lian ;
Ren, Xin ;
Bian, Lifeng ;
Lu, Shulong ;
Liang, Xiaogan .
APPLIED PHYSICS LETTERS, 2013, 103 (14)
[8]   Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems [J].
Cheng, Y. C. ;
Zhu, Z. Y. ;
Mi, W. B. ;
Guo, Z. B. ;
Schwingenschloegl, U. .
PHYSICAL REVIEW B, 2013, 87 (10)
[9]   Possible doping strategies for MoS2 monolayers: An ab initio study [J].
Dolui, Kapildeb ;
Rungger, Ivan ;
Das Pemmaraju, Chaitanya ;
Sanvito, Stefano .
PHYSICAL REVIEW B, 2013, 88 (07)
[10]   Structural stability and magnetic-exchange coupling in Mn-doped monolayer/bilayer MoS2 [J].
Fang, Qinglong ;
Zhao, Xumei ;
Huang, Yuhong ;
Xu, Kewei ;
Min, Tai ;
Chu, Paul K. ;
Ma, Fei .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20 (01) :553-561