Demonstration of High Voltage (15kV) Split-Gate 4H-SiC MOSFETs

被引：6

作者：

Lynch, Justin ^{[1
]}

Yun, Nick ^{[1
]}

Morgan, Adam J. ^{[1
]}

Sung, Woongje ^{[1
]}

Deckman, Igal ^{[2
]}

Rossman, Dennis ^{[2
]}

Kim, Sung ^{[2
]}

Nguyen, Duy-Son ^{[2
]}

Seo, Jin-Ho ^{[2
]}

Habersat, Daniel ^{[3
]}

Hinojosa, Miguel ^{[3
]}

Green, Ronald ^{[3
]}

Lelis, Aivars ^{[3
]}

机构：

[1] State Univ New York Polytech Inst, Albany, NY 12203 USA

[2] Analog Devices Inc, Milpitas, CA 95035 USA

[3] US Army, Res Lab, Adelphi, MD 20783 USA

来源：

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2021年

关键词：

Silicon Carbide; Ultra-High Voltage; 15kV; MOSFET; Split Gate; Gate Charge; Switching; T-CAD simulation; Specific On-Resistance; Breakdown Voltage; Edge Termination;

D O I：

10.1109/WiPDA49284.2021.9645153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, 15 kV 4H-SiC Split-Gate Vertical Planar MOSFETs (SG-MOSFET) are demonstrated for the first time. Both the traditional MOSFET and SG-MOSFET were fabricated on the same 6-inch SiC wafer and achieved maximum breakdown voltages (BV) of 15930 V and 15080 V, respectively. This is the first demonstration of the split gate architecture on SiC for voltage ratings above 10 kV, and this BV was achieved using a Hybrid-Junction Termination Extension (JTE) edge termination. The fabricated SG--MOSFETs showed a reduction in gate charge as well as no significant deviation in forward conduction and blocking behavior when compared to their MOSFET counterparts. These results display the SG-MOSFET's potential for lower switching power losses in ultra-high voltage devices without compromising device static performance. In the following text, the layout, static performance, and gate charge of the MOSFET and SG--MOSFET are described to show the exciting potential of the high voltage SG--MOSFET.

引用

页码：95 / 100

页数：6

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