High-performance GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ AIN passivation by metalorganic chemical vapor deposition

被引：5

作者：

Aoki, Takeshi ^{[1
]}

Fukuhara, Noboru ^{[1
]}

Osada, Takenori ^{[1
]}

Sazawa, Hiroyuki ^{[1
]}

Hata, Masahiko ^{[1
]}

Inoue, Takayuki ^{[1
]}

机构：

[1] Sumitomo Chem Co Ltd, IT Related Chem Res Lab, Tsukuba, Ibaraki 3003294, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期

关键词：

STATE TRAP DENSITY; ENHANCEMENT-MODE; MOBILITY; MOSFETS; CHANNEL; IMPACT;

D O I：

10.7567/APEX.7.106502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with Al2O3 gate oxide and in situ AlN passivation were investigated. Passivation with AlN improved the quality of the MOS interfaces, leading to good control of the gate. The devices had a sufficiently small subthreshold swing of 84 mV decade(-1) in the drain current vs gate voltage curves, as well as negligible frequency dispersions and nearly zero hysteresis in the gate capacitance vs gate voltage curves. A maximum drain current of 630 mA/mm and a peak effective mobility of 6720 cm(2)V(-1) s(-1) at a sheet carrier density of 3 x 10(12) cm(-2) were achieved. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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