High-performance GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ AIN passivation by metalorganic chemical vapor deposition

被引:5
作者
Aoki, Takeshi [1 ]
Fukuhara, Noboru [1 ]
Osada, Takenori [1 ]
Sazawa, Hiroyuki [1 ]
Hata, Masahiko [1 ]
Inoue, Takayuki [1 ]
机构
[1] Sumitomo Chem Co Ltd, IT Related Chem Res Lab, Tsukuba, Ibaraki 3003294, Japan
关键词
STATE TRAP DENSITY; ENHANCEMENT-MODE; MOBILITY; MOSFETS; CHANNEL; IMPACT;
D O I
10.7567/APEX.7.106502
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with Al2O3 gate oxide and in situ AlN passivation were investigated. Passivation with AlN improved the quality of the MOS interfaces, leading to good control of the gate. The devices had a sufficiently small subthreshold swing of 84 mV decade(-1) in the drain current vs gate voltage curves, as well as negligible frequency dispersions and nearly zero hysteresis in the gate capacitance vs gate voltage curves. A maximum drain current of 630 mA/mm and a peak effective mobility of 6720 cm(2)V(-1) s(-1) at a sheet carrier density of 3 x 10(12) cm(-2) were achieved. (C) 2014 The Japan Society of Applied Physics
引用
收藏
页数:4
相关论文
共 34 条
[1]  
[Anonymous], FUNDAMENTALS 3 5 SEM
[2]   Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition [J].
Aoki, T. ;
Fukuhara, N. ;
Osada, T. ;
Sazawa, H. ;
Hata, M. ;
Inoue, T. .
APPLIED PHYSICS LETTERS, 2014, 105 (03)
[3]   Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs [J].
Ayubi-Moak, J. ;
Benbakhti, B. ;
Kalna, K. ;
Paterson, G. W. ;
Hill, R. ;
Passlack, M. ;
Thayne, I. ;
Asenov, A. .
MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1564-1567
[4]   Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures [J].
Benbakhti, B. ;
Ayubi-Moak, J. S. ;
Kalna, K. ;
Lin, D. ;
Hellings, G. ;
Brammertz, G. ;
De Meyer, K. ;
Thayne, I. ;
Asenov, A. .
MICROELECTRONICS RELIABILITY, 2010, 50 (03) :360-364
[5]   Capacitance-voltage characterization of GaAs-Al2O3 interfaces [J].
Brammertz, G. ;
Lin, H. -C. ;
Martens, K. ;
Mercier, D. ;
Sioncke, S. ;
Delabie, A. ;
Wang, W. E. ;
Caymax, M. ;
Meuris, M. ;
Heyns, M. .
APPLIED PHYSICS LETTERS, 2008, 93 (18)
[6]   Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing [J].
Chang, Y. C. ;
Merckling, C. ;
Penaud, J. ;
Lu, C. Y. ;
Wang, W. -E. ;
Dekoster, J. ;
Meuris, M. ;
Caymax, M. ;
Heyns, M. ;
Kwo, J. ;
Hong, M. .
APPLIED PHYSICS LETTERS, 2010, 97 (11)
[7]  
Chiang T. H., 2008, INT EL DEV M, P15
[8]   GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation [J].
Gao, Fei ;
Lee, S. J. ;
Chi, D. Z. ;
Balakumar, S. ;
Kwong, D.-L. .
APPLIED PHYSICS LETTERS, 2007, 90 (25)
[9]   Nitrogen passivation at GaAs:Al2O3 interfaces [J].
Guo, Yuzheng ;
Lin, Liang ;
Robertson, John .
APPLIED PHYSICS LETTERS, 2013, 102 (09)
[10]   UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].
HASEGAWA, H ;
OHNO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138