Fully integrated distributed power amplifier in CMOS technology, optimized for UWB transmitters

被引：44

作者：

Grewing, C ^{[1
]}

Winterberg, K ^{[1
]}

van Waasen, S ^{[1
]}

Friedrich, M ^{[1
]}

Puma, GL ^{[1
]}

Wiesbauer, A ^{[1
]}

Sandner, C ^{[1
]}

机构：

[1] Infineon Technol AG, Dev Ctr, Dusseldorf, Germany

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

distributed amplifiers; CMOS power amplifiers; broadband amplifiers; data communication; indoor radio communication; Ultra Wide Band;

D O I：

10.1109/RFIC.2004.1320534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A power amplifier (PA) in distributed amplifier technique for the Ultra Wide Band (UWB) standard is presented. The amplifier was fabricated in a standard 0.13 mum CMOS technology and comes with an on-chip biasing circuitry and a non-distributed input stage. Measurement results are given for a chip-on-board module to take any influence of a product assembly into account. It achieves a transmission coefficient S-21 = 17 dB, a corner frequency of f(c) = 8 GHz and a 1 dB compression point of A(1dB) = 3.5 dBm. The output impedance is matched to 50 Omega so that external matching circuitry can be omitted. With these features it is customized to be integrated with the other building blocks to a fully integrated CMOS UWB transmitter product.

引用

页码：87 / 90

页数：4

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