Improvement in high-k (HfO2/SiO2) reliability by incorporation of fluorine

被引：42

作者：

Seo, Kang-ill ^{[1
]}

Sreenivasan, Raghavasirnhan

McIntyre, Paul C.

Saraswat, Krishna C.

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 10期

关键词：

fluorine; HfO2/SiO2; high-k; interface states; negative bias temperature instability (NBTI); positive charges;

D O I：

10.1109/LED.2006.882564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate that negative bias temperature instability of high-kappa (HfO2/SiO2) gate dielectric stacks can be greatly improved by incorporating fluorine and engineering its concentration depth profile with respect to HfO2/SiO2 interface. It was found that fluorine is easily incorporated in HfO2/SiO2 at low temperatures (<= 400 degrees C) by F-2 anneal in the presence of UV radiation. Fluorine tends to segregate at the HfO2/SiO2 interface and, to a lesser extent, diffuses into the underlying SiO2/Si interface. The HfO2/SiO2 stacks with F addition show significantly reduced (< 50 %) positive charge trapping and interface states generation compared to control samples without F.

引用

页码：821 / 823

页数：3

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