Low temperature surface passivation of silicon solar cells

被引：0

作者：

Ghaisas, S. V. ^{[1
]}

Shinde, O. S. ^{[1
,2
]}

Dusane, R. O. ^{[3
]}

Dhere, N. G. ^{[2
]}

机构：

[1] SP Pune Univ, Sch Energy Studies, Pune 411007, Maharashtra, India

[2] Univ Cent Florida, Florida Solar Energy Ctr, Cocoa, FL 32922 USA

[3] Indian Inst Technol, Bombay 400076, Maharashtra, India

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

ELECTRICAL PASSIVATION;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

low temperature surface passivation is a process that has a potential to reduce the input energy cost of the solar cell with minimum modification of the manufacturing bed, while keeping the efficiency, and life of the cells within acceptable range of values. In this review, low temperature deposition methods of SiO2, Al2O3, a-Si: H, silicon nano particles (NPs), and organic materials, are considered. Surface recombination velocities, defect densities, stability of these passivating layers are discussed along with the mechanisms of passivation on Si surface.

引用

页码：2889 / 2892

页数：4