Current Transport Mechanism in High-κ Cerium Oxide Gate Dielectrics Grown on Germanium Substrates

被引：21

作者：

Rahman, M. S. ^{[1
]}

Evangelou, E. K. ^{[1
]}

Androulidakis, I. I. ^{[1
]}

Dimoulas, A. ^{[2
]}

机构：

[1] Univ Ioannina, Dept Phys, Lab Elect Telecommun & Applicat, GR-45110 Ioannina, Greece

[2] Natl Ctr Sci Res, MBE Lab, Athens 15310, Greece

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 05期

关键词：

cerium compounds; germanium; high-k dielectric thin films; MIS devices; MIS structures; platinum; Poole-Frenkel effect; Schottky barriers; GE;

D O I：

10.1149/1.3086259

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The current transport mechanism of Pt/CeO2/p-Ge metal-oxide-semiconductor devices is investigated. The results are based on the analyses of gate current vs gate voltage curves at temperatures ranging from 295 to 375 K. At low to medium electric fields (similar to 0.1 to 0.9 MV/cm) the main current conduction mechanism is Schottky emission, while Poole-Frankel conduction is the dominant mechanism at higher fields across the oxide (similar to 1.2 to 2.1 MV/cm). The barrier height (Phi(b)) at the Pt/CeO2 interface is found to be equal to 0.91 +/- 0.02 eV, while the trap energy level (Phi(t)) responsible for the Poole-Frenkel conduction is estimated to be around 0.60 +/- 0.03 eV.

引用

页码：H165 / H168

页数：4

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