Large spatial Goos-Hanchen shifts from quasicrystals with graphene

We investigate the spatial Goos-Hanchen (GH) shift of reflected beam from quasicrystals composed of Fibonacci dielectrics and graphene. The quasicrystals are composed of two symmetrical Fibonacci dielectrics and graphene is embedded in the center of the quasicrystals. The compound structure could induce enhanced band edge states, around which the complex phases of reflection coefficients change dramatically with the light wavelength. Consequently, large spatial GH shifts which may be negative and positive are achieved. Furthermore, the signs of GH shifts may be tuned by the incident wavelength conveniently. This may have potential applications for highly sensitive sensors.