Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor

被引：17

作者：

Liao, Meiyong ^{[1
]}

Imura, Masataka ^{[2
]}

Fang, Xiaosheng ^{[2
]}

Nakajima, Kiyomi ^{[3
]}

Chen, Guangchao ^{[1
]}

Koide, Yasuo ^{[1
,3
]}

机构：

[1] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, ICYS, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, Nanoinnovat Ctr NICe, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期

关键词：

alumina; boron; buffer layers; diamond; dielectric hysteresis; dielectric polarisation; doping profiles; ferroelectric coercive field; ferroelectric thin films; lead compounds; leakage currents; MFIS structures; MIS capacitors; semiconductor doping; semiconductor epitaxial layers; strontium compounds; LEAD-ZIRCONATE-TITANATE; FIELD-EFFECT TRANSISTOR; TECHNOLOGY;

D O I：

10.1063/1.3156030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the integration of ferroelectric Pb(Zr-0.52,Ti-0.48)O-3 (PZT) thin film on single crystal diamond by using Al2O3 as a buffer layer and SrTiO3 as a seed layer. The PZT film exhibits a remanent in-plane polarization of 2P(r)=31 mu C/cm(2) and a coercive field of 36 kV/cm. The electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) capacitor using boron-doped single crystal diamond epilayer are investigated. The leakage current of the MFIS device is found to be greatly reduced as compared to that of the metal/diamond Schottky diode. Although the overall capacitance-voltage characteristic shows a trap dominated hysteresis behavior, the ferroelectric polarization induced voltage shift is demonstrated under positive gate voltage.

引用

页数：3

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