60 keV Ar+-ion induced pattern formation on Si surface: Roles of sputter erosion and atomic redistribution

被引：17

作者：

Garg, S. K. ^{[1
]}

Datta, D. P. ^{[1
]}

Kumar, M. ^{[1
]}

Kanjilal, D. ^{[2
]}

Som, T. ^{[1
]}

机构：

[1] Inst Phys, Bhubaneswar 751005, Orissa, India

[2] Interuniv Accelerator Ctr, New Delhi 110067, India

来源：

APPLIED SURFACE SCIENCE | 2014年 / 310卷

关键词：

Ion irradiation; Atomic force microscopy; Self-organized surface patterns; Parametric phase diagram; Curvature dependent sputter erosion and atomic redistribution; RIPPLE TOPOGRAPHY; BOMBARDMENT; SILICON; ENERGY; EVOLUTION; INSTABILITY; MORPHOLOGY; SCATTERING; SI(100); YIELDS;

D O I：

10.1016/j.apsusc.2014.03.115

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study the evolution of surface morphology on Si(100) surface due to 60 keV Ar+-ion irradiation at room temperature for a wide range of ion fluences (2-80 x 10(17) ions cm(-2)) and angles of incidence (0 degrees-75 degrees). We have clearly distinguished linear and nonlinear regimes for the observed ripple patterns in our experiment. From our experimental results and those available in the literature, we have created a parametric phase diagram which summarizes an overview of pattern formation on silicon surface under medium energy ion irradiation. On the basis of this phase diagram, we demonstrate some striking similarities between medium and low energy ion-induced ripple patterns and infer that similar mechanisms may be responsible for pattern formation at both regimes. Comparison of our experimental results with numerical estimations reveals that both curvature dependent sputter erosion and ion induced atomic redistribution are responsible for the observed evolution of surface morphology. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：147 / 153

页数：7

共 42 条

[1] Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering [J].