共 4 条
- [1] Fabrication of a P-channel SiC-IGBT with High Channel Mobility [J]. SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 958 - 961
- [2] Nagatomo Y., 2000, J JAPAN I ELECT PACK, V3, P330
- [3] GaN-HEMTs for High-Voltage Switching Applications [J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 43 - 49
- [4] Yuu Y, 2011, HAIMETENO POWER DEVI