Ablation of submicron structures on metals and semiconductors by femtosecond UV-laser pulses

被引：69
|
作者：
Simon, P
Ihlemann, J
机构：
[1] Laser-Laboratorium Göttingen, 37016 Göttingen
来源：
APPLIED SURFACE SCIENCE | 1997年 / 109卷
关键词：
D O I：
10.1016/S0169-4332(96)00615-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ablation of submicron structures on nickel, aluminum, copper, chromium, gold, silicon and germanium is presented by short ultraviolet laser pulses (0.5 ps, 248 nm). Features like periodic line structures with a line-spacing below 400 nm, and holes with characteristic sizes well below 1 mu m are produced on the sample surface by single laser shot exposure. The structures are projection printed by a Schwarzschild-objective (N.A. = 0.4) in air environment. A comparison of the morphology of ablation sites of various materials with different pulse durations (100 fs-50 ps) is presented. The role of thermal diffusion effects is discussed.
引用
收藏
页码：25 / 29
页数：5
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