Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing

被引：21
作者：
Shen, Qiang [1 ]
Zhou, Wei [2 ]
Ran, Guang [1 ]
Li, Ruixiang [1 ]
Feng, Qijie [2 ]
Li, Ning [1 ]
机构：
[1] Xiamen Univ, Coll Energy, Xiamen 361102, Fujian, Peoples R China
[2] China Acad Engn Phys, Mianyang 621900, Sichuan, Peoples R China
来源：
MATERIALS | 2017年 / 10卷 / 02期
关键词：
SiC; irradiation; annealing; bubble growth; microstructure; ELECTRON-MICROSCOPY; SILICON-CARBIDE; METALS; IMPLANTATION; DIFFUSION; CAVITIES; REACTORS; STRAIN; DAMAGE; WATER;
D O I：
10.3390/ma10020101
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He+ ions with 1 x 10(17) ions/cm(2) fluence at 400 degrees C were annealed at 600, 900, 1200 and 1400 degrees C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. An irradiated layer distributed with fine helium bubbles was formed with a width of similar to 170 nm after helium ion irradiation. The size of gas bubbles increased with increasing annealing time and temperature and finally reached stable values at a given annealing temperature. According to the relationship between the bubble radii and annealing time, an empirical formula for calculating the bubble radii at the annealing temperature ranged from 600 to 1400 degrees C was given by fitting the experiment data. Planar bubble clusters (discs) were found to form on (0001) crystal plane at both sides of the bubble layer when the annealing temperature was at the range of 800-1200 degrees C. The mechanism of bubble growth during post-implantation annealing and the formation of bubble discs were also analyzed and discussed.
引用
收藏
页数：8
相关论文
共 33 条
  • [1] Bardeleben H. J., 2001, APPL SURF SCI, V184, P237, DOI [10.1016/S0169-4332(01)00676-6, DOI 10.1016/S0169-4332(01)00676-6]
  • [2] Ab initio study of the annealing of vacancies and interstitials in cubic SiC:: Vacancy-interstitial recombination and aggregation of carbon interstitials -: art. no. 235202
    Bockstedte, M
    Mattausch, A
    Pankratov, O
    [J]. PHYSICAL REVIEW B, 2004, 69 (23) : 235202 - 1
  • [3] Evolution of helium platelets and associated dislocation loops in α-SiC
    Chen, J
    Jung, P
    Trinkaus, H
    [J]. PHYSICAL REVIEW LETTERS, 1999, 82 (13) : 2709 - 2712
  • [4] Microstructural evolution of helium-implanted α-SiC
    Chen, J
    Jung, P
    Trinkaus, H
    [J]. PHYSICAL REVIEW B, 2000, 61 (19): : 12923 - 12932
  • [5] Helium bubbles in nickel annealed at T>0.7Tm
    Chernikov, VN
    Trinkaus, H
    Ullmaier, H
    [J]. JOURNAL OF NUCLEAR MATERIALS, 1997, 250 (2-3) : 103 - 110
  • [6] Atomic computer simulations of defect migration in 3C and 4H-SiC
    Gao, F
    Weber, WJ
    Posselt, M
    Belko, V
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 457 - 460
  • [7] Neutronic analysis of candidate accident-tolerant cladding concepts in pressurized water reactors
    George, Nathan Michael
    Terrani, Kurt
    Powers, Jeff
    Worrall, Andrew
    Maldonado, Ivan
    [J]. ANNALS OF NUCLEAR ENERGY, 2015, 75 : 703 - 712
  • [8] Displacement damage in silicon carbide irradiated in fission reactors
    Heinisch, HL
    Greenwood, LR
    Weber, WJ
    Williford, RE
    [J]. JOURNAL OF NUCLEAR MATERIALS, 2004, 327 (2-3) : 175 - 181
  • [9] Ion-irradiation-induced athermal annealing of helium bubbles in SiC
    Hua, Wei
    Yao, Shu-De
    Theodore, N. David
    Wang, Xue-Mei
    Chu, Wei-Kan
    Martin, Michael
    Shao, Lin
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (14) : 2325 - 2328
  • [10] Disordering behavior and helium diffusion in He+ irradiated 6H-SiC
    Jiang, W
    Weber, WJ
    Wang, CM
    Zhang, Y
    [J]. JOURNAL OF MATERIALS RESEARCH, 2002, 17 (02) : 271 - 274
1234