Absorption and emission spectra of Ga1.7Ge25As8.3S65 glasses doped with rare-earth ions

Excellent optical properties of chalcogenide glasses make them interesting for optoelectronic devices in the visible (VIS) and, especially, in the near-and mid-infrared (NIR and MIR) spectral regions. The rare-earth (RE3+) doped Ga17Ge25As8.3S65 glasses were prepared in evacuated (similar to 10(-5) Pa) silica-glass ampoules which were heated up to 1000 degrees C at 2-4 degrees C min(-1), and then the melt was quenched. The absorption and photoluminescence spectra in the visible and near IR regions for Ga1.7Ge25As8.3S65 doped with rare- earth RE+) ions (Sm3+, Nd3+, Pr3+, Dy3+ and co-doped with Ho3++ Dy3+) are investigated. The energy transfer of the absorbed light in the broad band Urbach region of the host glass to the RE3+ ions is suggested for increasing the emission efficiency. The investigated Ga17Ge25As8.3S65 glasses doped with RE (3+) ions are promising materials for optical amplifiers operating at 1300 and 1500 nm telecommunication windows.