Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes

被引：22

作者：

Lee, Kwanjae ^{[1
,2
,3
]}

Lee, Cheul-Ro ^{[1
,2
]}

Lee, Jin Hong ^{[3
]}

Chung, Tae-Hoon ^{[3
]}

Ryu, Mee-Yi ^{[4
]}

Jeong, Kwang-Un ^{[5
,6
]}

Leem, Jae-Young ^{[7
]}

Kim, Jin Soo ^{[1
,2
]}

机构：

[1] Chonbuk Natl Univ, Div Adv Mat Engn, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea

[3] Korea Photon Technol Inst, Gwangju 500779, South Korea

[4] Kangwon Natl Univ, Dept Phys, Chunchon 200701, South Korea

[5] Chonbuk Natl Univ, Dept Polymer Nano Sci & Technol, Jeonju 561756, South Korea

[6] Chonbuk Natl Univ, Polymer Mat Fus Res Ctr, Jeonju 561756, South Korea

[7] Inje Univ, Sch Nano Engn, Gimhae 621749, South Korea

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

QUANTUM; LAYERS; POWER;

D O I：

10.1364/OE.24.007743

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report significant improvement in optical and electrical properties of green InGaN/GaN light-emitting diodes (LEDs) by using Sidoped graded short-period InGaN/GaN superlattice (SiGSL) formed by so called indium-conversion technique. For comparison, a conventional LED without the superlattice (C-LED) and a LED with undoped graded superlattice (unGSL-LED) were prepared, respectively. The photoluminescence (PL) intensity of the SiGSL-LED was increased more than 3 times at room temperature (RT) as compared to C-LED. The PL intensity ratios of RT to 10K for the C-LED, unGSL-LED, and SiGSL-LED were measured to be 25, 40.9, and 47.5%, respectively. The difference in carrier lifetimes between 10K and RT for the SiGSL-LED is relatively small compared to that of the C-LED, which is consistent with the variation in PL intensity. The output power of a transistor-outline type SiGSL-LED was increased more than 2 times higher than that of the C-LED. (C) 2016 Optical Society of America

引用

页码：7743 / 7751

页数：9

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