Systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes

被引：61

作者：

Maruyama, T ^{[1
]}

Luh, DA

Brachmann, A

Clendenin, JE

Garwin, EL

Harvey, S

Jiang, J

Kirby, RE

Prescott, CY

Prepost, R

Moy, AM

机构：

[1] Stanford Linear Accelerator Ctr, Menlo Pk, CA 94025 USA

[2] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[3] SVT Associates Inc, Eden Prairie, MN 55344 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 13期

关键词：

D O I：

10.1063/1.1795358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-polarized electron photoemission has been studied for GaAs/GaAs1-xPx strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the photoemission characteristics. The heavy-hole and light-hole transitions are reproducibly observed in quantum efficiency spectra, enabling direct measurement of the band energies and the energy splitting. Electron-spin polarization as high as 86% with over 1% quantum efficiency has been observed. (C) American Institute of Physics.

引用

页码：2640 / 2642

页数：3

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