Current-driven switching of exchange biased spin-valve giant magnetoresistive nanopillars using a conducting nanoprobe

被引：5
|
作者：
Hayakawa, J
Ito, K
Fujimori, M
Heike, S
Hashizume, T
Steen, J
Brugger, J
Ohno, H
机构：
[1] Hitachi Ltd, Adv Res Lab, Kokubunji, Tokyo 1858601, Japan
[2] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9800871, Japan
[3] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan
[4] Ecole Polytech Fed Lausanne, Microsyst Lab, CH-1015 Lausanne, Switzerland
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期
关键词：
D O I：
10.1063/1.1769605
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An array of exchange biased spin-valve giant-magnetoresistance nanopillars was fabricated and the current I dependence of the resistance R was investigated using an electrically conducting atomic-force microscope (AFM) probe contact at room temperature. We observed current induced switching in a MnIr/CoFe/Cu/CoFe/NiFe nanopillar using the AFM probe contact. Current-driven switching using nanoprobe contact is a powerful method for developing nonvolatile and rewritable magnetic memory with high density. (C) 2004 American Institute of Physics.
引用
收藏
页码：3440 / 3442
页数：3
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